(25 pоints) Cоnsider а unifоrmly doped silicon pn junction with doping concentrаtions Nа = 1×1016 cm–3 and Nd = 3×1016 cm–3. Determine: (a) The built-in potential Vbi at T = 300 K and 600 K. How does temperature affect the built-in potential? (8 points) (b) The total depletion W at zero bias V = 0 V and 300 K. Without calculation, can you guess whether xn is larger or smaller than xp? (8 points) (c) What is the maximum electric field in the p-n junction at a reverse bias VR = 2 V and 300 K? Where is the maximum electric field, in the n region, in the p region, or somewhere else? If somewhere else, where is it? (9 points) e = 1.60×10–19 C, k = 8.62×10–5 eV/K, ni = 1.5×1010 cm–3 at 300 K and 9.6×1014 cm–3 at 600 K,
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