THIS CONTENT IS PROTECTED AND MAY NOT BE SHARED, UPLOADED, SOLD, OR DISTRIBUTED Prоblem 5. – 10 Pоints tоtаl A power semiconductor device consists of а region doped with Arsenic аtoms such that the concentration of electrons is n0 = [nd] x 1018 cm-3 and another region doped with Boron atoms such that the concentration of holes is p0 = [na] x 1017 cm-3. The device dissipates power which generates heat, thus heating the silicon crystal to a temperature of T = [T0] °K. Use: m*n = 1.08 m0, m*p = 0.56 m0, Egap = 1.12 eV = Ec with Ev = 0 as the reference, and m0 is the free electron mass = 9.11 x 10-31 kg. Assume Boltzmann statistics applies and work only on the n-type or the p-type region; no need to work on both. For the region you select, do the following: (a) Find the intrinsic Fermi level EFi 2 pts (b) Find the intrinsic carrier concentration ni = pi 2 pts (c) Find EF - Ev 2 pts (d) Find Ec - EF 2 pts (e) Calculate the respective minority carrier concentrations n0 or p0 2 pts